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- W984526356 abstract "This chapter discusses the electronic structure of semiconductor surfaces and interfaces. There are large dipole shifts at the metal-semiconductor interface from defects implies that they must be large in number. They must be negatively charged in the semiconductor (with the balancing positive charge an image charge in the metal) in order to raise the semiconductor bands from their natural line-up position. In silicon, the metallic Fermi energy comes always about a third of the way up in the gap, though the natural line-u places it much higher, and vary considerably from metal to metal. It is very difficult to know what defects are present and in what numbers, but these experimental facts limit the possibilities. So speculations are based in the chapter upon them. The simplest defect in the semiconductor might be a metallic atom impurity. Indeed an impurity of valenceone less than the atom replaced will have a negative charge and enough of them will have the desired effect. The difficulty is that the number required and their positions depends upon the metal at the interface and it is not easy to imagine this leading to a Fermi energy line-up in the gap independent of the metal." @default.
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- W984526356 date "1985-01-01" @default.
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- W984526356 title "Electronic Structure of Semiconductor Surfaces and Interfaces" @default.
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- W984526356 doi "https://doi.org/10.1016/s0167-2991(08)65093-4" @default.
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