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• W984909808 endingPage "246" @default.
• W984909808 startingPage "61" @default.
• W984909808 abstract "Publisher Summary This chapter focuses on the semiconductor electrochemistry. The difference between metals and semiconductors is, fundamentally, electronic in origin. In a metal, overlap of atomic or ionic orbital on neighboring sites leads to a continuum of levels that are only partially occupied by electrons. There are, therefore, energy levels immediately above the topmost occupied level that are empty and easily accessible thermally, and the ability of electrons to move freely into these levels gives rise to the characteristic properties associated with a metal, such as conductivity and reflectivity. The behavior of an extrinsic semiconductor electrode is quite different according to whether the potential is positive or negative of the flat-band potential. For an n-type semiconductor at potentials negative of the flat-band potential, the surface becomes degenerate, and a large fraction of the potential change will occur across the Helmholtz layer. At positive potentials, corresponding to the “reverse bias” configuration, the potential change is accommodated primarily across the depletion layer inside the semiconductor. Electron transfer at semiconductors can be contrasted with that at metal electrode surfaces. For a nondegenerate semiconductor, the Fermi level lie within the bandgap, and the density of allowed electronic levels at the Fermi level itself will, therefore, be very low. Electron transfer can only occur to or from levels within the conduction band or the valence band." @default.
• W984909808 created "2016-06-24" @default.
• W984909808 creator A5031971762 @default.
• W984909808 date "1988-01-01" @default.
• W984909808 modified "2023-09-25" @default.
• W984909808 title "Chapter 2 Semiconductor Electrochemistry" @default.
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