FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W98596960> ?p ?o ?g. }

• W98596960 abstract "The characterization and fabrication of active matrix TFTs [Thin Film Transistors] have been studied for applying an addressable microfluidic electrowetting channel device. The a-IGZO [Amorphous Indium Gallium Zinc Oxide] is used for electronic switching device to control the microfluidic device because of its high mobility, transparency, and easy to fabrication. The purpose of this dissertation is to optimize each IGZO TFT process including the optimization of a-IGZO properties to achieve robust device for application. To drive the IGZO TFTs, the channel resistance of IGZO layer and contact resistance between IGZO layer and source/drain (S/D) electrode are discussed in this dissertation. In addition, the generalization of IGZO sputter condition is investigated by calculation of IGZO and O2 [Oxygen] incorporation rate at different oxygen partial pressure and different sputter targets. To develop the robust IGZO TFTs, the different passivation layers deposited by RF [Radio Frequency] magnetron sputter are investigated by comparing the electrical characteristics of TFTs. The effects PECVD [Plasma Enhanced Chemical Vapor Deposition] of SiO2 [Silicon Dioxide] passivation layers on IGZO TFTs is studied the role of hydrogen and oxygen with analyzed and compared the concentration by the SIMS [Secondary Ion Mass Spectroscopy].In addition, the preliminary electrowetting tests are performed for electrowetting phenomena, the liquid droplet actuation, the comparison between conventional electrowetting and Laplace barrier electrowetting, and the different size electrode effect for high functional properties. The active matrix addressing method are introduced and investigated for driving the electrowetting microfluidic channel device by Pspice simulation. Finally, the high resolution electrowetting microfluidic device (16ⅹ16 matrix) is demonstrated by driving liquid droplet and channel moving using active matrix addressing method and fully integrated IGZO TFTs." @default.
• W98596960 created "2016-06-24" @default.
• W98596960 creator A5013601530 @default.
• W98596960 date "2013-01-01" @default.
• W98596960 modified "2023-09-23" @default.
• W98596960 title "New Application for Indium Gallium Zinc Oxide thin film transistors: A fully integrated Active Matrix Electrowetting Microfluidic Platform" @default.
• W98596960 cites W1909235131 @default.
• W98596960 cites W1966940769 @default.
• W98596960 cites W1976668659 @default.
• W98596960 cites W1982544185 @default.
• W98596960 cites W1982968328 @default.
• W98596960 cites W1985232250 @default.
• W98596960 cites W1986626819 @default.
• W98596960 cites W1999589524 @default.
• W98596960 cites W2014657621 @default.
• W98596960 cites W2016305078 @default.
• W98596960 cites W2017382270 @default.
• W98596960 cites W2020055346 @default.
• W98596960 cites W2024247501 @default.
• W98596960 cites W2031545687 @default.
• W98596960 cites W2040179822 @default.
• W98596960 cites W2068561631 @default.
• W98596960 cites W2078782272 @default.
• W98596960 cites W2084591572 @default.
• W98596960 cites W2086103622 @default.
• W98596960 cites W2086187432 @default.
• W98596960 cites W2089595371 @default.
• W98596960 cites W2098130488 @default.
• W98596960 cites W2099276065 @default.
• W98596960 cites W2105772751 @default.
• W98596960 cites W2131716975 @default.
• W98596960 cites W2134960271 @default.
• W98596960 cites W2150068960 @default.
• W98596960 cites W2158799497 @default.
• W98596960 cites W2163185901 @default.
• W98596960 cites W2165668388 @default.
• W98596960 cites W2166910998 @default.
• W98596960 cites W2321983703 @default.
• W98596960 cites W1989558752 @default.
• W98596960 hasPublicationYear "2013" @default.
• W98596960 type Work @default.
• W98596960 sameAs 98596960 @default.
• W98596960 citedByCount "0" @default.
• W98596960 crossrefType "journal-article" @default.
• W98596960 hasAuthorship W98596960A5013601530 @default.
• W98596960 hasConcept C127413603 @default.
• W98596960 hasConcept C133386390 @default.
• W98596960 hasConcept C147789679 @default.
• W98596960 hasConcept C171250308 @default.
• W98596960 hasConcept C17525397 @default.
• W98596960 hasConcept C185592680 @default.
• W98596960 hasConcept C19067145 @default.
• W98596960 hasConcept C192562407 @default.
• W98596960 hasConcept C22423302 @default.
• W98596960 hasConcept C24326235 @default.
• W98596960 hasConcept C2779227376 @default.
• W98596960 hasConcept C2779673822 @default.
• W98596960 hasConcept C33574316 @default.
• W98596960 hasConcept C49040817 @default.
• W98596960 hasConcept C61427134 @default.
• W98596960 hasConcept C70201059 @default.
• W98596960 hasConcept C8673954 @default.
• W98596960 hasConcept C87359718 @default.
• W98596960 hasConcept C92444450 @default.
• W98596960 hasConceptScore W98596960C127413603 @default.
• W98596960 hasConceptScore W98596960C133386390 @default.
• W98596960 hasConceptScore W98596960C147789679 @default.
• W98596960 hasConceptScore W98596960C171250308 @default.
• W98596960 hasConceptScore W98596960C17525397 @default.
• W98596960 hasConceptScore W98596960C185592680 @default.
• W98596960 hasConceptScore W98596960C19067145 @default.
• W98596960 hasConceptScore W98596960C192562407 @default.
• W98596960 hasConceptScore W98596960C22423302 @default.
• W98596960 hasConceptScore W98596960C24326235 @default.
• W98596960 hasConceptScore W98596960C2779227376 @default.
• W98596960 hasConceptScore W98596960C2779673822 @default.
• W98596960 hasConceptScore W98596960C33574316 @default.
• W98596960 hasConceptScore W98596960C49040817 @default.
• W98596960 hasConceptScore W98596960C61427134 @default.
• W98596960 hasConceptScore W98596960C70201059 @default.
• W98596960 hasConceptScore W98596960C8673954 @default.
• W98596960 hasConceptScore W98596960C87359718 @default.
• W98596960 hasConceptScore W98596960C92444450 @default.
• W98596960 hasLocation W985969601 @default.
• W98596960 hasOpenAccess W98596960 @default.
• W98596960 hasPrimaryLocation W985969601 @default.
• W98596960 hasRelatedWork W2063968111 @default.
• W98596960 hasRelatedWork W2165161442 @default.
• W98596960 hasRelatedWork W2285940259 @default.
• W98596960 hasRelatedWork W2293679407 @default.
• W98596960 hasRelatedWork W2331645497 @default.
• W98596960 hasRelatedWork W2340213284 @default.
• W98596960 hasRelatedWork W2561709346 @default.
• W98596960 hasRelatedWork W2744338927 @default.
• W98596960 hasRelatedWork W2760886459 @default.
• W98596960 hasRelatedWork W2798327204 @default.
• W98596960 hasRelatedWork W2806494607 @default.
• W98596960 hasRelatedWork W2940481048 @default.
• W98596960 hasRelatedWork W2948830274 @default.
• W98596960 hasRelatedWork W2971794745 @default.

• next