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• W993035334 abstract "The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure." @default.
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• W993035334 date "2013-01-01" @default.
• W993035334 modified "2023-09-24" @default.
• W993035334 title "Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers" @default.
• W993035334 hasPublicationYear "2013" @default.
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