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- W995417911 abstract "应用深能级瞬态谱(DLTS)技术详细研究低压-金属有机物汽相外延(LP-MOVPE)生长的Ga_(0.74)In_(0.53)As/InP量子阱、宽接触和质子轰击条形异质结激光器中的深能级。样品的DLTS表明,在宽接触激光器的i-Ga_(0.47)In(0.53)As有源层里观察到 H1(Ev+0.09eV)和E1(E_c-0.35eV)陷阱,它们可能分别与样品生长过程中扩散到i-Ga_(0.47)In_(0.53)As有源层的Zn和材料本身的原生缺陷有关。而条形激光器的i-Ga_(0.47)In_(0.53)A_s有源层的 H_2(E_v+0.11eV)和 E_2(E_q-0.42eV)陷阱则可能是H1和E1与质子轰击引起的损伤相互作用的产物 。" @default.
- W995417911 created "2016-06-24" @default.
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- W995417911 date "1994-05-20" @default.
- W995417911 modified "2023-10-17" @default.
- W995417911 title "低压-金属有机物汽相外延生长的Ga（1-x）InxAs/InP激光器中深能级的研究" @default.
- W995417911 hasPublicationYear "1994" @default.
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